Compound Semiconductor Bulk Materials and Characterizations by Osamu Oda

By Osamu Oda

This e-book is worried with compound semiconductor bulk fabrics and has been written for college kids, researchers and engineers in fabric technological know-how and equipment fabrication. It deals them the trouble-free and intermediate wisdom of compound semiconductor bulk fabrics useful for getting into this box. within the first half, the ebook describes the actual houses, crystal development applied sciences, rules of crystal development, a variety of defects in crystals, characterization strategies and purposes. within the moment and the 3rd components, the ebook reports numerous compound semiconductor fabrics, together with vital business fabrics and the result of contemporary learn.

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T lower h e the interatomic distance, the more fragile the material. 39To obtain flat etching faces, a combination of oxidizing agent and acid is used. 9 Interatomic Distance A Fig. 32 procedures are very important when applied to wafers produced from grown bulk single crystals. The chemistry of etching properties is discussed in detail by Faust. 2 Stacking Fault Energy A stacking fault is a plane defect where the stacking of single crystal planes is misordered. This means that in the case of a zincblende structure, ABCABC stacking is misordered as AB/ABCA.

4 VAPOR PHASE GROWTH METHOD The vapor phase growth method is industrially applied in the crystal growth of CdTe and S i c which have high sublimation pressures. This method is also promising for ZnSe, ZnS whose sublimation pressure is rather higher. There are three methods, the CRYSTAL GROWTH METHOD 43 direct synthesis (DS) method, the physical vapor transport (PVT) and the chemical vapor transport (CVT) methods. 1 Direct Synthesis (DS) Method In early vapor phase growth studies, the material was prepared directly from its constituents and the reacted compound was deposited in the lower temperature region in order to grow crystals.

42 (1979) 317. 14. J. Nuese, in Crystal Growth: A Tutorial Approach, eds. W. J. B. Mullin (North-Holland, Amsterdam, 1979) p. 353. 15. E. Mooser and W. B. Pearson, J. Electron. 1 (1956) 629. 16. E. Mooser and W. B. Pearson, J. Chem. Phys. 26 (1957) 893. 17. R. Pamplin, J. Phys. Chem. Solids 25 (1964) 675. PHYSICAL PROPERTIES 27 18. C. Phillips, An Introduction to Crystallography (Wiley, 3rd ed. 1963). 19. C. Kittel, Introduction to Solid State Physics, 5th ed. (John Wiley & Sons, New York 1976).

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